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Title:
POLYCRYSTALLINE SILICON INGOT CASTING MOLD, AND SILICON NITRIDE POWDER FOR MOLD RELEASE MATERIAL, SLURRY CONTAINING SILICON NITRIDE POWDER FOR MOLD RELEASE LAYER AND CASTING RELEASE MATERIAL THEREFOR
Document Type and Number:
WIPO Patent Application WO/2012/090543
Kind Code:
A1
Abstract:
Provided are a polycrystalline silicon ingot casting mold, and a silicon nitride powder for a mold release material, a slurry containing the silicon nitride powder for the mold release layer, and a casting release material for the polycrystalline silicon ingot casting mold, which are low cost, have excellent adhesion with the mold, and enable high-quality silicon ingots to be obtained at high yields by minimizing fragments and damage that occur when solidified silicon ingots are released from the mold. The silicon nitride powder for the mold release layer for the polycrystalline silicon ingot casting mold is characterized in that the percentage of granular crystal primary particles dispersed alone in the powder is at least 95% in terms of the area ratio calculated from the analysis of an SEM image.

Inventors:
YAMAO TAKESHI (JP)
HONDA MICHIO (JP)
JIDA SHINSUKE (JP)
Application Number:
PCT/JP2011/067109
Publication Date:
July 05, 2012
Filing Date:
July 27, 2011
Export Citation:
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Assignee:
UBE INDUSTRIES (JP)
YAMAO TAKESHI (JP)
HONDA MICHIO (JP)
JIDA SHINSUKE (JP)
International Classes:
C01B33/02; B22C3/00; B22D25/04; C01B21/068
Domestic Patent References:
WO2008026688A12008-03-06
WO2008026688A12008-03-06
Foreign References:
JP2007261832A2007-10-11
JP2002239682A2002-08-27
JP2005161359A2005-06-23
JPS5921506A1984-02-03
JP2008532114A2008-08-14
JP2005095924A2005-04-14
JP2907366B21999-06-21
JP2907367B21999-06-21
JP3282456B22002-05-13
JP3077870B22000-08-21
JP2007261832A2007-10-11
Other References:
See also references of EP 2660202A4
Attorney, Agent or Firm:
ITAMI, Masaru et al. (JP)
Itami 勝 (JP)
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Claims: