Title:
POLYONIUM SALT PHOTOACID GENERATOR FOR ARF LIGHT SOURCE DRY LITHOGRAPHY, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/024231
Kind Code:
A1
Abstract:
Disclosed in the present invention are a polyonium salt photoacid generator for ArF light source dry lithography, and a preparation method therefor and an application thereof. The photoacid generator is an onium salt having an anions and an onium ion, the anion having a structure as shown in formula (I), the onium ion having a structure shown in formula (A) or formula (B), and the number of onium ions keeping the charge of the onium salt neutral. A photoresist comprising the onium salt of the present invention has better resolution, sensitivity and linewidth roughness.
Inventors:
FANG SHUNONG (CN)
WANG SU (CN)
GENG ZHIYUE (CN)
WANG SU (CN)
GENG ZHIYUE (CN)
Application Number:
PCT/CN2021/124604
Publication Date:
March 02, 2023
Filing Date:
October 19, 2021
Export Citation:
Assignee:
SHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD (CN)
CHINA ADVANCED LITHOGRAPHIC MATERIAL TECH CO LTD (CN)
CHINA ADVANCED LITHOGRAPHIC MATERIAL TECH CO LTD (CN)
International Classes:
C07C309/42; C07C303/32; C07C319/20; C07C321/30; C07C323/20; G03F7/004
Foreign References:
CN109796382A | 2019-05-24 | |||
CN102140074A | 2011-08-03 | |||
CN101381329A | 2009-03-11 | |||
CN112592304A | 2021-04-02 | |||
CN110058489A | 2019-07-26 | |||
CN111909373A | 2020-11-10 | |||
US20190243243A1 | 2019-08-08 |
Attorney, Agent or Firm:
SHANGHAI BESHINING LAW OFFICE (CN)
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