Title:
POSITIVE RESIST COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/153466
Kind Code:
A1
Abstract:
The present invention provides a positive resist composition, a resist film using the positive resist composition, a pattern formation method, and a method for manufacturing an electronic device, said resist composition containing an ionic compound (A) and a resin (B) that: has a repeating unit (b1) having an interacting group interacting with an ionic group in the ionic compound; and a main chain that decomposes as a result of irradiation by X rays, electron beams, or extreme UV rays.
Inventors:
TAKADA AKIRA (JP)
GOTO AKIYOSHI (JP)
YAGI KAZUNARI (JP)
SHIRAKAWA MICHIHIRO (JP)
MARUMO KAZUHIRO (JP)
GOTO AKIYOSHI (JP)
YAGI KAZUNARI (JP)
SHIRAKAWA MICHIHIRO (JP)
MARUMO KAZUHIRO (JP)
Application Number:
PCT/JP2021/002339
Publication Date:
August 05, 2021
Filing Date:
January 22, 2021
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C08F212/08; C09K3/00; G03F7/004; G03F7/039; G03F7/20
Domestic Patent References:
| WO2014002808A1 | 2014-01-03 |
Foreign References:
| JP2011195812A | 2011-10-06 | |||
| JP2013041160A | 2013-02-28 | |||
| JP2007192907A | 2007-08-02 | |||
| JP2011037834A | 2011-02-24 | |||
| JP2017146521A | 2017-08-24 | |||
| JP2013127526A | 2013-06-27 | |||
| JP2017132965A | 2017-08-03 | |||
| JPH03132760A | 1991-06-06 | |||
| JP2014059543A | 2014-04-03 | |||
| JP2013061648A | 2013-04-04 | |||
| US20160070167A1 | 2016-03-10 | |||
| JP2009267112A | 2009-11-12 | |||
| JP2004235468A | 2004-08-19 | |||
| US20100020297A1 | 2010-01-28 | |||
| JP2008083384A | 2008-04-10 | |||
| JP2020015892A | 2020-01-30 |
Other References:
JOURNAL OF THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6924, 2008, pages 692420
"Semiconductor Process Text Book", 2007, SEMI JAPAN, article "Etching"
"EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement", PROC. OF SPIE, vol. 8328
See also references of EP 4098672A4
"Semiconductor Process Text Book", 2007, SEMI JAPAN, article "Etching"
"EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement", PROC. OF SPIE, vol. 8328
See also references of EP 4098672A4
Attorney, Agent or Firm:
KOH-EI PATENT FIRM, P.C. (JP)
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