Title:
POWER AMPLIFICATION CHIP BIAS CIRCUIT BASED ON GAAS HBT PROCESS
Document Type and Number:
WIPO Patent Application WO/2021/258277
Kind Code:
A1
Abstract:
Disclosed is a power amplification chip bias circuit based on a GaAs HBT process, relating to a new generation of information technology. The present solution is proposed in view of the problems in the prior art of negative effects of a temperature compensation means on volume, power, etc. A temperature sensing resistor is obtained by using a diode and a first resistor, several HBTs are connected in series to replace a traditional resistor, and a bias voltage is led out from each HBT, so as to realize the output of a multi-order positive temperature coefficient voltage. The voltage is further converted by means of a current mirror and a second resistor having a positive temperature coefficient, so as to provide a bias current, a temperature drift of which is suppressed, for a power amplification chip. The requirements of a mobile device for a high level of integration, a high power output, a high stability and a low cost are effectively met. The present invention can be implemented to meet the strict requirements of a power amplification chip of a mobile device in terms of volume, power consumption, long-term sustainable operation, etc. by means of a very low complexity and a relatively high reliability, and has a good popularization value.
Inventors:
LI BIN (CN)
MA YUANBO (CN)
WU ZHAOHUI (CN)
MA YUANBO (CN)
WU ZHAOHUI (CN)
Application Number:
PCT/CN2020/097617
Publication Date:
December 30, 2021
Filing Date:
June 23, 2020
Export Citation:
Assignee:
UNIV SOUTH CHINA TECH (CN)
International Classes:
G05F1/567; H03F1/30
Foreign References:
| CN110311632A | 2019-10-08 | |||
| CN106230390A | 2016-12-14 | |||
| CN110809856A | 2020-02-18 | |||
| CN103684287A | 2014-03-26 | |||
| US20180262166A1 | 2018-09-13 |
Attorney, Agent or Firm:
GUANGZHOU HAIXIN UNION PATENT LAW OFFICE (CN)
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