Title:
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/135313
Kind Code:
A1
Abstract:
A power semiconductor device and a manufacturing method therefor. The device comprises: a substrate (1); drain metal (10); a drift region (2); a base region (3); a gate structure; a first conductive type doped region (13) contacting the base region (3) on the side of the base region (3) distant from the gate structure; a source region (4) provided in the base region (3) and between the first conductive type doped region (13) and the gate structure; contact metal (11) that is provided on the first conductive type doped region (13) and forms a contact barrier having rectifying characteristics together with the first conductive type doped region (13) below; and source metal (6) wrapping the contact metal (11) and contacting the source region (4).
Inventors:
SUN WEIFENG (CN)
LOU RONGCHENG (CN)
XIAO KUI (CN)
LIN FENG (CN)
WEI JIAXING (CN)
LI SHENG (CN)
LIU SIYANG (CN)
LU SHENGLI (CN)
SHI LONGXING (CN)
LOU RONGCHENG (CN)
XIAO KUI (CN)
LIN FENG (CN)
WEI JIAXING (CN)
LI SHENG (CN)
LIU SIYANG (CN)
LU SHENGLI (CN)
SHI LONGXING (CN)
Application Number:
PCT/CN2019/127355
Publication Date:
July 02, 2020
Filing Date:
December 23, 2019
Export Citation:
Assignee:
UNIV SOUTHEAST (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/06
Foreign References:
CN107580725A | 2018-01-12 | |||
CN105810722A | 2016-07-27 | |||
CN105762176A | 2016-07-13 | |||
CN108257856A | 2018-07-06 | |||
US20040262678A1 | 2004-12-30 |
Other References:
See also references of EP 3905334A4
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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