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Patent Searching and Data


Title:
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/135313
Kind Code:
A1
Abstract:
A power semiconductor device and a manufacturing method therefor. The device comprises: a substrate (1); drain metal (10); a drift region (2); a base region (3); a gate structure; a first conductive type doped region (13) contacting the base region (3) on the side of the base region (3) distant from the gate structure; a source region (4) provided in the base region (3) and between the first conductive type doped region (13) and the gate structure; contact metal (11) that is provided on the first conductive type doped region (13) and forms a contact barrier having rectifying characteristics together with the first conductive type doped region (13) below; and source metal (6) wrapping the contact metal (11) and contacting the source region (4).

Inventors:
SUN WEIFENG (CN)
LOU RONGCHENG (CN)
XIAO KUI (CN)
LIN FENG (CN)
WEI JIAXING (CN)
LI SHENG (CN)
LIU SIYANG (CN)
LU SHENGLI (CN)
SHI LONGXING (CN)
Application Number:
PCT/CN2019/127355
Publication Date:
July 02, 2020
Filing Date:
December 23, 2019
Export Citation:
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Assignee:
UNIV SOUTHEAST (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/06
Foreign References:
CN107580725A2018-01-12
CN105810722A2016-07-27
CN105762176A2016-07-13
CN108257856A2018-07-06
US20040262678A12004-12-30
Other References:
See also references of EP 3905334A4
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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