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Title:
POWER SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/111846
Kind Code:
A1
Abstract:
A power semiconductor device (1) comprises a first power semiconductor element (20), lead-out wiring (41), and a plate-shaped terminal (50). The plate-shaped terminal (50) includes a first terminal portion (51) and a second terminal portion (52). The first terminal portion (51) is joined to a first obverse surface electrode (21) of the first power semiconductor element (20). The second terminal portion (52) is joined to the lead-out wiring (41). A first linear expansion coefficient difference between the first power semiconductor element (20) and the first terminal portion (51) is greater than a second linear expansion coefficient difference between the lead-out wiring (41) and the second terminal portion (52). The first terminal portion (51) is thinner than the second terminal portion (52).

Inventors:
BESSHI NORIYUKI (JP)
TARUYA MASAAKI (JP)
HAYASHI KEI (JP)
Application Number:
PCT/JP2020/042392
Publication Date:
June 10, 2021
Filing Date:
November 13, 2020
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/48; H01L21/60; H01L25/07; H01L25/18
Domestic Patent References:
WO2017221730A12017-12-28
Foreign References:
JP2006253516A2006-09-21
JP2019186264A2019-10-24
JP2019197842A2019-11-14
JP2008041851A2008-02-21
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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