Title:
POWER SEMICONDUCTOR DEVICE, PRODUCTION METHOD FOR POWER SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/038688
Kind Code:
A1
Abstract:
A semiconductor device that suppresses resin leakage from a resin insulating member at an outer peripheral part of the resin insulating member and thereby achieves improved reliability. A semiconductor device that comprises a module unit (2), a resin insulating member (12) that is adhered to the module unit (2), a cooling unit (13) that is connected to the module unit (2) via the resin insulating member (12), and a flow prevention member (11) that is sandwiched between the module unit (2) and the cooling unit (13) so as to surround the resin insulating member (12) and is more easily compressed than the resin insulating member (12).
Inventors:
KOBAYASHI HIROSHI (JP)
YAMANE TOMOHISA (JP)
SODA SHINNOSUKE (JP)
YAMANE TOMOHISA (JP)
SODA SHINNOSUKE (JP)
Application Number:
PCT/JP2019/033313
Publication Date:
March 04, 2021
Filing Date:
August 26, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/36; H01L25/07; H01L25/18
Domestic Patent References:
| WO2017130512A1 | 2017-08-03 |
Foreign References:
| JP2012138475A | 2012-07-19 | |||
| JP2012174965A | 2012-09-10 |
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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