Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/150451
Kind Code:
A1
Abstract:
An n-type semiconductor layer (1a) has a single-crystal structure and is made from a wide-gap semiconductor material. A p-type semiconductor layer (4A) is formed on the n-type semiconductor layer (1a), made from a material different from the wide-gap semiconductor material, and has one of a microcrystal structure and an amorphous structure. An electrode (3) is formed on at least one of the n-type semiconductor layer (1a) and the p-type semiconductor layer (4A).
Inventors:
WATAHIKI TATSURO (JP)
YUDA YOHEI (JP)
FURUKAWA AKIHIKO (JP)
MIYAJIMA SHINSUKE (JP)
TAKIGUCHI YUKI (JP)
YUDA YOHEI (JP)
FURUKAWA AKIHIKO (JP)
MIYAJIMA SHINSUKE (JP)
TAKIGUCHI YUKI (JP)
Application Number:
PCT/JP2017/005286
Publication Date:
August 23, 2018
Filing Date:
February 14, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
TOKYO INST TECH (JP)
TOKYO INST TECH (JP)
International Classes:
H01L29/872
Foreign References:
| JP2012216780A | 2012-11-08 | |||
| JP2016111253A | 2016-06-20 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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