POWER SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2021/088156

A1

Disclosed is a split-gate trench power semiconductor device, comprising: an active region provided on a semiconductor substrate, wherein the active region comprises a first well region and a second well region, longitudinally stacked along the surface of the semiconductor substrate toward the bottom of the semiconductor substrate, and one or more true gate trenches passing through the first well region and the second well region, a split polysilicon true gate is provided in the true gate trench, and comprises a polysilicon main true gate and a polysilicon auxiliary true gate separately arranged near the top and bottom of the trench respectively, the polysilicon main gate is a control gate for connecting with an external gate driving circuit, between the polysilicon main true gate and the polysilicon auxiliary true gate, and a polysilicon true gate is isolated from sidewalls of the true gate trenches and the bottom of the true gate trenches by an interlayer dielectric. According to the present application, the polysilicon gate in a strip trench is split to form a split gate, thereby reducing the parasitic capacitance, and then using different electrical connections and setting the thickness of an oxide layer so as to achieve the overall optimization of chip performance.

SU YUANHONG (CN)
WANG YAFEI (CN)
WANG YANGANG (CN)
DAI XIAOPING (CN)
QIN RONGZHEN (CN)
LUO HAIHUI (CN)

PCT/CN2019/121254

May 14, 2021

November 27, 2019

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ZHUZHOU CRRC TIMES ELECTRIC CO LTD (CN)

H01L29/06; H01L29/739; H01L29/423

US6750508B2	2004-06-15
CN102694014A	2012-09-26
CN100339959C	2007-09-26
CN108321196A	2018-07-24
US20160149034A1	2016-05-26
CN107516680A	2017-12-26

YUHONG INTELLECTUAL PROPERTY LAW FIRM (CN)

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