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Title:
POWER TYPE SEMICONDUCTOR DEVICE PACKAGING STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/056603
Kind Code:
A1
Abstract:
A power type semiconductor device packaging structure, comprising several chip assemblies (4). Each chip assembly (4) comprises a first terminal and a second terminal; the C electrode (1) of a semiconductor device is connected to the first terminal; the E electrode (3) of the semiconductor device is connected to the second terminal. A flexible conductive layer (5) and an insulating plate (10) with two surfaces being coated with conductive layers are further comprised. One surface of the insulating plate (10) is connected to the first terminal; the other surface of the insulating plate (10) is provided with several first conductive protrusions (10a) used for bearing the flexible conductive layer (5); the first conductive protrusions (10a) connect the other surface of the insulating plate (10) with the flexible conductive layer (5); the flexible conductive layer (5) is connected to the E electrode (3).

Inventors:
QIU YUFENG (CN)
LI XIANBING (CN)
ZHAO ZHIBIN (CN)
WU JUNMIN (CN)
ZHANG PENG (CN)
ZHANG LEI (CN)
TANG XINLING (CN)
Application Number:
PCT/CN2019/109576
Publication Date:
April 01, 2021
Filing Date:
September 30, 2019
Export Citation:
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Assignee:
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD (CN)
International Classes:
H01L23/367; H01L23/48; H01L23/498
Foreign References:
CN110676176A2020-01-10
CN107768328A2018-03-06
CN108122897A2018-06-05
CN108172617A2018-06-15
CN105789157A2016-07-20
US6281569B12001-08-28
Attorney, Agent or Firm:
BEYOND ATTORNEYS AT LAW (CN)
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