Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PREPARATION METHOD FOR SINGLE CRYSTAL SILICON WAFER HAVING NON-100 CRYSTAL ORIENTATION
Document Type and Number:
WIPO Patent Application WO/2021/180248
Kind Code:
A1
Abstract:
A preparation method for a single crystal silicon wafer (3) having a non-100 crystal orientation, comprising the following steps: cutting an oblique quadrangular prism-shaped silicon block (2) from a single crystal silicon rod (1), the bottom face (21) of the silicon block being perpendicular to the axis of the single crystal silicon rod; dividing the four side faces of the silicon block into two pairs: one pair of parallel first side faces (22) perpendicular to the bottom face, and one pair of parallel second side faces (23) that are slanted relative to the bottom face; and slicing silicon block in a direction parallel to the second side faces, silicon wafers obtained from said slicing being single crystal silicon wafers having a non-100 crystal orientation. The present method is able to take 240 mm-diameter single crystal silicon rods as raw material and prepare 210 mm x 210 mm silicon wafers having a non-100 crystal orientation, meeting more demands.

Inventors:
YUE WEIWEI (CN)
MENG XIANGXI (CN)
YANG LIGONG (CN)
CAO YUHONG (CN)
Application Number:
PCT/CN2021/086424
Publication Date:
September 16, 2021
Filing Date:
April 12, 2021
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
CHANGZHOU SHICHUANG ENERGY CO LTD (CN)
International Classes:
B28D5/00
Foreign References:
CN111267248A2020-06-12
CN103862584A2014-06-18
CN109080012A2018-12-25
CN103545409A2014-01-29
CN110854238A2020-02-28
CN103203671A2013-07-17
JP2018082001A2018-05-24
EP1955813A12008-08-13
Attorney, Agent or Firm:
SUZHOU MAMBO PATENT AGENCY (GENERAL PARTNERSHIP) (CN)
Download PDF: