Title:
PROCESS LIQUID COMPOSITION FOR LITHOGRAPHY AND PATTERN FORMING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/010609
Kind Code:
A1
Abstract:
The present invention relates to a process liquid composition for reducing lifting defects and the number of defects in a photoresist pattern which has a hydrophobic photoresist surface with a water contact angle of 70° or more, in a photoresist pattern process. More specifically, the present invention relates to a process liquid composition for reducing lifting defects and the number of defects in a photoresist pattern and a pattern forming method using same, the process liquid composition comprising: 0.00001 to 0.1 wt% of a fluorine-based surfactant; 0.0001 to 0.1 wt% of a hydrocarbon-based anionic surfactant; 0.0001 to 0.1 wt% of an alkaline material; and 99.7 to 99.99979 wt% of water and having a surface tension of 40 mN/m or less and a contact angle of 60° or less.
More Like This:
WO/2000/034996 | STRIPPING AGENT AGAINST RESIST RESIDUES |
JP2024014773 | Photoresist stripping liquid |
JP2023169533 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
Inventors:
LEE SU JIN (KR)
KIM GI HONG (KR)
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
KIM GI HONG (KR)
LEE SEUNG HUN (KR)
LEE SEUNG HYUN (KR)
Application Number:
PCT/KR2020/008141
Publication Date:
January 21, 2021
Filing Date:
June 24, 2020
Export Citation:
Assignee:
YOUNG CHANG CHEMICAL CO LTD (KR)
International Classes:
G03F7/42; C11D1/00; C11D1/02; C11D1/94; C11D3/04; C11D11/00; G03F7/26; G03F7/32
Foreign References:
JP2016504482A | 2016-02-12 | |||
KR20080009970A | 2008-01-30 | |||
KR20090017129A | 2009-02-18 | |||
KR20130123164A | 2013-11-12 | |||
KR20180126555A | 2018-11-27 |
Other References:
See also references of EP 4002011A4
Attorney, Agent or Firm:
HAEDAM IP GROUP (KR)
Download PDF: