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Patent Searching and Data


Title:
PROCESS FOR MAKING A MIM CAPACITOR
Document Type and Number:
WIPO Patent Application WO2003021661
Kind Code:
B1
Abstract:
A process for forming a metal-insulator-metal (MIM) capacitor structure includes forming a recess in the dielectric layer (20) of a semiconductor substrate (10). A first capacitor electrode (30, 40) is formed in the recess having a copper first metal layer (30) with a conductive oxidation barrier (40) formed over the first metal layer (30). The first capacitor electrode (30, 40) is planarized relative to the dielectric layer (20). An insulator (50) is formed over the first capacitor electrode (30, 40) and a second capacitor electrode (65) is formed over the insulator (50). Forming the first capacitor electrode (30, 40) in the recess maintains the alignment of a periphery of the copper first metal layer (30) with the conductive oxidation barrier (40).

Inventors:
ROBERTS DOUGLAS R
LUCKOWSKI ERIC
Application Number:
PCT/US2002/025909
Publication Date:
September 12, 2003
Filing Date:
August 13, 2002
Export Citation:
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Assignee:
MOTOROLA INC (US)
International Classes:
H01L21/02; H01L23/52; H01L21/3205; H01L21/768; H01L21/822; H01L27/04; (IPC1-7): H01L21/8242
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