Title:
PROCESS FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2007/077957
Kind Code:
A1
Abstract:
The invention relates to a process for the production of polycrystalline silicon
which comprises the following steps (A), (B) and (C): the step (A) of reducing
a chlorosilane represented by the general formula (1): SiHnCl4-n(1)
(wherein n is an integer of 0 to 3) with a metal at a temperature T1 into a silicon
compound, the step (B) of transferring the silicon compound to a section having
a temperature T2 (wherein T1 > T2), and the step (C) of depositing polycrystalline
silicon in the section having a temperature T2, with the provisos that T1 is at
least 1.29 times the melting point (absolute temperature) of the metal and that
T2 is higher than the subliming or boiling point of chloride of the metal. The process
enables the production of high-purity polycrystalline silicon in high yield.
Further, the invention includes solar batteries provided with the polycrystalline
silicon obtained the process and equipment for manufacturing polycrystalline
silicon.
Inventors:
YAMABAYASHI TOSHIHARU (JP)
HATA MASAHIKO (JP)
HATA MASAHIKO (JP)
Application Number:
PCT/JP2006/326358
Publication Date:
July 12, 2007
Filing Date:
December 26, 2006
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
YAMABAYASHI TOSHIHARU (JP)
HATA MASAHIKO (JP)
YAMABAYASHI TOSHIHARU (JP)
HATA MASAHIKO (JP)
International Classes:
C01B33/033; H01L31/04
Foreign References:
| JPS60103016A | 1985-06-07 | |||
| JPH0264006A | 1990-03-05 | |||
| JPS368416B1 | ||||
| JPS5484825A | 1979-07-06 |
Attorney, Agent or Firm:
ENOMOTO, Masayuki et al. (Limited 5-33, Kitahama 4-chome, Chuo-k, Osaka-shi Osaka 50, JP)
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