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Patent Searching and Data


Title:
READING CIRCUIT FOR DIFFERENTIAL OTP MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/127361
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of memories. Provided is a reading circuit for a differential OTP memory. The differential OTP memory comprises a first storage unit and a second storage unit, which are in a differential symmetrical structure, and the reading circuit is connected between the first storage unit and the second storage unit. The reading circuit comprises: a measurement unit, which is used for measuring, after a burning operation on the first storage unit or the second storage unit is completed, one of the resistance value of a first efuse located in the first storage unit, the resistance value of a second efuse located in the second storage unit, and the resistance value difference between the first efuse and the second efuse; and a latch unit, which is used for providing read data according to one of the resistance value of the first efuse, the resistance value of the second efuse and the resistance value difference between the first efuse and the second efuse, which are measured by the measurement unit. The reading circuit can not only read data normally, but can also measure the resistance value of an efuse, thereby ensuring the accuracy and reliability of read data.

Inventors:
MAN XUECHENG (CN)
MA XUAN (CN)
Application Number:
PCT/CN2021/125343
Publication Date:
June 23, 2022
Filing Date:
October 21, 2021
Export Citation:
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Assignee:
SG MICRO CORP (CN)
International Classes:
G11C17/18
Foreign References:
US20090109724A12009-04-30
US20050247997A12005-11-10
US7936582B12011-05-03
US20040190346A12004-09-30
CN108520767A2018-09-11
CN101283412A2008-10-08
Attorney, Agent or Firm:
TOWIN INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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