Title:
REDUCING PARTICLE GENERATION DURING SPUTTER DEPOSITION
Document Type and Number:
WIPO Patent Application WO2003090248
Kind Code:
A3
Abstract:
In a sputtering chamber (12), a substrate is placed in the chamber and a deposit on shield (21) is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target (14) facing the substrate (16) to form a plasma in the chamber while a rotating magnetic field of at least about 300 Gauss is applied about the target to sputter the target. Advantageously, the sputtering process cycle can be repeated for at least about 8,000 substrates without cleaning the internal surfaces in the chamber, and even while still generating an average particle count on each processed substrate of less than 1 particle per 10 cm.
Inventors:
LE HIEN-MINH HUU
MILLER KEITH A
KIEU HOA T
NGAN KENNY KING-TAI
MILLER KEITH A
KIEU HOA T
NGAN KENNY KING-TAI
Application Number:
PCT/US2003/011994
Publication Date:
March 25, 2004
Filing Date:
April 17, 2003
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
International Classes:
C23C14/34; C23C14/56; H01J37/34; (IPC1-7): H01J37/32; B28B3/02; H01J37/34
Foreign References:
| EP0882812A1 | 1998-12-09 | |||
| EP1049133A2 | 2000-11-02 | |||
| US5320729A | 1994-06-14 | |||
| US20010037938A1 | 2001-11-08 | |||
| US6258217B1 | 2001-07-10 | |||
| EP1067577A2 | 2001-01-10 | |||
| US5770136A | 1998-06-23 |
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