RESIST COMPOUND AND RESIST COMPOSITION

WIPO Patent Application WO/2005/114331

A1

A resist composition which comprises one or more resist compounds (A) satisfying all of the requirements of (a) having, in the molecule thereof, at least one crosslinking group undergoing a crosslinking reaction directly or indirectly by the irradiation with any radiation selected from the group consisting of a visible light, an ultraviolet ray, an excimer laser, an extreme ultraviolet ray (EUV), an electron beam, an X-ray and an ion beam, (b) having, in the molecule thereof, one or more functional groups selected from the group consisting of a urea group, a urethane group, an amino group and an imido group, (c) having a molecular weight of 500 to 5000, and (d) having a branched structure; and the resist compound. The above resist composition allows the formation of a resist pattern exhibiting an enhanced resolution, which results in the manufacture of a semiconductor element having a higher integration degree.

OGURO DAI (JP)
ECHIGO MASATOSHI (JP)
HAYASHI TAKEO (JP)

PCT/JP2005/009249

December 01, 2005

May 20, 2005

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MITSUBISHI GAS CHEMICAL CO (JP)
OGURO DAI (JP)
ECHIGO MASATOSHI (JP)
HAYASHI TAKEO (JP)

C07C271/28; C07C275/40; C07C275/62; C07D251/34; C07D405/14; C07F9/12; C07F9/18; C07F9/655; G03F7/027; G03F7/038; H01L21/027; (IPC1-7): G03F7/038; C07C271/28; C07C275/40; C07C275/62; C07D251/34; C07D405/14; C07F9/18; C07F9/655; G03F7/027; H01L21/027

JP2000241970A	2000-09-08
JPH0841151A	1996-02-13
JPS5319059A	1978-02-21
JPH10282649A	1998-10-23
JP2004341482A	2004-12-02
JP2003122002A	2003-04-25
JP2004045447A	2004-02-12
JPH09100458A	1997-04-15
JPH02306955A	1990-12-20
JP2003506507A	2003-02-18

Ohtani, Tamotsu (Bridgestone Toranomon Bldg. 6F. 25-2, Toranomon 3-chom, Minato-ku Tokyo 01, JP)

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