RESIST PATTERN FORMATION METHOD

WIPO Patent Application WO/2021/166741

A1

A resist pattern formation method according to the present invention includes: a step for forming a resist film on a support body by using a resist composition which generates acid via light exposure and of which the solubility with an alkali developing solution is increased due to the action of the acid; a step for exposing the resist film to light; and a step for forming a positive resist pattern by alkali-developing the post-exposure resist film. Employed as the resist composition is a resist composition containing a first resin component and a second resin component, wherein the first resin component includes a polymeric compound having a constituent unit derived from acrylic acid in which the hydrogen atom bonded to the carbon atom at the α-position may be substituted with a substituent, and the second resin component includes a polymeric compound having both a constituent unit that includes a phenolic hydroxyl group and a constituent unit that includes an acid-degradable group of which the polarity is increased by the action of acid. Through this there can be provided a novel resist pattern formation method by which development film reduction is suppressed, high sensitivity is achieved, and residue is less likely to be produced.

SHIMURA EIICHI (JP)

PCT/JP2021/004768

August 26, 2021

February 09, 2021

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TOKYO OHKA KOGYO CO LTD (JP)

C08F112/14; C08F112/34; C08F212/14; C08F220/18; G03F7/039; G03F7/20

JP2017107211A	2017-06-15
JP2015118202A	2015-06-25
JP2014085643A	2014-05-12
JP2006154569A	2006-06-15
JP2014106306A	2014-06-09
JP2018022039A	2018-02-08
JP2016148740A	2016-08-18

TANAI Sumio et al. (JP)

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