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Title:
RINSE SOLUTION, AND PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/251059
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing: a rinse solution exhibiting excellent resolution and excellent film loss inhibitory properties when used for rinsing resist films; and a pattern formation method using the rinse solution. The rinse solution is a rinse solution for resist film patterning on a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, and contains at least a first ester-based C7 solvent other than acetic acid ester.

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Inventors:
TAKAHASHI SATOMI (JP)
TSUCHIHASHI TORU (JP)
Application Number:
PCT/JP2021/018367
Publication Date:
December 16, 2021
Filing Date:
May 14, 2021
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/32; H01L21/027
Domestic Patent References:
WO2020071042A12020-04-09
WO2016208312A12016-12-29
WO2016052273A12016-04-07
WO2016194613A12016-12-08
WO2017094860A12017-06-08
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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