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Title:
RuO4 GAS GENERATION SUPPRESSION AGENT, AND RuO4 GAS GENERATION SUPPRESSION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/060234
Kind Code:
A1
Abstract:
Provided are an RuO4 gas generation suppression agent for suppressing RuO4 gas generated when a treatment liquid is brought into contact with a ruthenium-containing semiconductor wafer, and a method for suppressing RuO4 gas, the agent and method being used in a step for manufacturing a semiconductor element. Specifically, provided is an RuO4 gas generation suppression agent for suppressing RuO4 gas generated when a treatment liquid is brought into contact with a ruthenium-containing semiconductor wafer in a semiconductor formation step, the suppression agent including an onium salt formed from onium ions and bromine-containing ions. In addition, provided is a method for suppressing generated RuO4 gas by adding the suppression agent to a ruthenium treatment liquid or to a ruthenium-containing liquid used in the semiconductor formation step.

Inventors:
SATO TOMOAKI (JP)
KIKKAWA YUKI (JP)
SHIMODA TAKAFUMI (JP)
NEGISHI TAKAYUKI (JP)
Application Number:
PCT/JP2020/035677
Publication Date:
April 01, 2021
Filing Date:
September 23, 2020
Export Citation:
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Assignee:
TOKUYAMA CORP (JP)
International Classes:
C23F1/40; H01L21/304; H01L21/306; H01L21/308; H01L21/3205; H01L21/3213; H01L21/768; H01L23/532
Domestic Patent References:
WO2011074601A12011-06-23
WO2019151144A12019-08-08
WO2019151145A12019-08-08
Attorney, Agent or Firm:
IP FIRM SHUWA (JP)
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