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Title:
SELF-BIASED BANDGAP REFERENCE CIRCUIT WITH WIDE RANGE OF INPUT VOLTAGES AND HIGH-PRECISION OUTPUT
Document Type and Number:
WIPO Patent Application WO/2017/041691
Kind Code:
A1
Abstract:
A self-biased bandgap reference circuit having a wide range of input voltages and a high-precision output. The circuit comprises a self-biasing unit. The self-biasing unit comprises a mirroring unit and a following unit. The self-biasing unit can reduce a voltage difference between bias points (x, y) at a high supply voltage effectively and increase the matching precision and thus the precision of an output reference voltage. Also, the self-biased circuit structure does not use an operational amplifier, and thus has a simple structure and reduces the power consumption, thereby addressing the application problem of a thin gate oxide high-voltage device and eliminating the clamping control specific to an output voltage of the operational amplifier, so as to prevent a gate of a high-voltage MOS transistor from being punctured at a high voltage of a thin gate oxide. Further, since a minimum value of an input voltage (Vdd) is a sum of threshold voltages of MOS transistors, and a maximum value of the input voltage (Vdd) is related to a Vds withstand value of the MOS transistor and can be a high value, therefore, the present invention can operate in a wide range of input voltages.

Inventors:
XU YUSEN (CN)
WU PATRICK BIAN (CN)
Application Number:
PCT/CN2016/098175
Publication Date:
March 16, 2017
Filing Date:
September 06, 2016
Export Citation:
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Assignee:
EXCELIO TECH (SHENZHEN) CO LTD (CN)
WUXI EXCELIO TECH CO LTD (CN)
International Classes:
G05F1/56
Domestic Patent References:
WO1998020610A11998-05-14
Foreign References:
CN105116954A2015-12-02
CN103926968A2014-07-16
CN1719722A2006-01-11
CN102315823A2012-01-11
CN102571002A2012-07-11
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