Title:
SELF-REFERENCE STORAGE STRUCTURE AND STORAGE AND CALCULATION INTEGRATED CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2022/073311
Kind Code:
A1
Abstract:
Provided are a self-reference storage structure and a storage and calculation integrated circuit. The self-reference storage structure comprises: three transistors, including a first transistor T1, a second transistor T2, and a third transistor T3; and two magnetic tunnel junctions, including a first magnetic tunnel junction MTJ0 and a second magnetic tunnel junction MTJ1. The first magnetic tunnel junction MTJ0 is connected in series between the first transistor T1 and the second transistor T2, and the second magnetic tunnel junction MTJ1 is connected in series between the second transistor T2 and the third transistor T3. When the first transistor T1, the second transistor T2 and the third transistor T3 are turned on, one-bit binary information is written; and when data is stored, one-bit binary write can be implemented only by applying an unidirectional current.
Inventors:
XING GUOZHONG (CN)
LIN HUAI (CN)
LIU YU (CN)
ZHANG KAIPING (CN)
ZHANG KANGWEI (CN)
LV HANGBING (CN)
XIE CHANGQING (CN)
LIU QI (CN)
LI LING (CN)
LIU MING (CN)
LIN HUAI (CN)
LIU YU (CN)
ZHANG KAIPING (CN)
ZHANG KANGWEI (CN)
LV HANGBING (CN)
XIE CHANGQING (CN)
LIU QI (CN)
LI LING (CN)
LIU MING (CN)
Application Number:
PCT/CN2021/070110
Publication Date:
April 14, 2022
Filing Date:
January 04, 2021
Export Citation:
Assignee:
INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (CN)
International Classes:
G11C11/16
Foreign References:
| CN110660420A | 2020-01-07 | |||
| CN111724840A | 2020-09-29 | |||
| CN106229004A | 2016-12-14 | |||
| US10290340B1 | 2019-05-14 |
Attorney, Agent or Firm:
BEIJING BRIGHT & RIGHT LAW FIRM (CN)
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