SEMICONDUCTOR DEVICE AND AUTOMOBILE

WIPO Patent Application WO/2014/103036

A1

The present invention is provided with: a semiconductor element, which has a gate, and which is controlled by means of a gate voltage; a gate drive circuit that controls the gate voltage; an electrode, which is connected to the semiconductor element, and which has a main current of the semiconductor element flowing therein; a temperature detecting section that detects a temperature of the electrode; a generating section, which generates, on the basis of the temperature detected by means of the temperature detecting section, a first control signal for applying a maximum quantity of power to the semiconductor element within a range in which the temperature of the electrode does not exceed a predetermined temperature; and a comparing section, which compares the first control signal and a second control signal with each other, said second control signal having been transmitted from the outside so as to control the gate voltage, and which selects a selection control signal, i.e., a control signal capable of suppressing the temperature of the electrode. The gate drive circuit controls the gate voltage corresponding to the selection control signal.

AIKO MITSUNORI (JP)
ARAKI SHINTARO (JP)

PCT/JP2012/084153

July 03, 2014

December 28, 2012

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MITSUBISHI ELECTRIC CORP (JP)
AIKO MITSUNORI (JP)
ARAKI SHINTARO (JP)

H01L25/07; H01L23/58; H01L25/18

JP2009254158A	2009-10-29
JP2002110866A	2002-04-12
JPH06112425A	1994-04-22
JPS6139561A	1986-02-25

TAKADA, Mamoru et al. (JP)
Takada 守 (JP)

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