Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/090657
Kind Code:
A1
Abstract:
This semiconductor device includes: a semiconductor material layer forming a channel layer; a pair of source/drain electrodes formed on the semiconductor material layer; and a gate electrode disposed between the pair of source/drain electrodes and formed on the semiconductor material layer with a gate insulating film therebetween. A connection path is formed between at least one of the pair of source/drain electrodes and the gate electrode. The connection path uses a capacitor: which is constituted of an insulating film formed in the same layer as a gate insulating film with the pair of electrodes sandwiching the insulating film; and in which the capacitor undergoes dielectric breakdown at a lower voltage than the dielectric breakdown voltage of the gate insulating film.
Inventors:
MORITA SHINYA (JP)
TAKEUCHI KATSUHIKO (JP)
TAKEUCHI KATSUHIKO (JP)
Application Number:
PCT/JP2020/038900
Publication Date:
May 14, 2021
Filing Date:
October 15, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/82; H01L21/3205; H01L21/336; H01L21/337; H01L21/338; H01L21/768; H01L21/822; H01L21/8234; H01L23/532; H01L27/04; H01L27/06; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| WO2018153557A1 | 2018-08-30 |
Foreign References:
| JPS57143865A | 1982-09-06 | |||
| JP2015173237A | 2015-10-01 | |||
| JPH05291309A | 1993-11-05 | |||
| JP2016195195A | 2016-11-17 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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