Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2021/099885
Kind Code:
A1
Abstract:
Provided is a new semiconductor device. In the present invention, a memory string extends in a Z direction, and a high-speed operation is achieved by using an oxide semiconductor for a semiconductor layer. The memory string includes a MONOS-type memory cell, a tunnel layer is provided on a control gate side, and a block layer is provided on a semiconductor side. Holes are injected into a charge storage layer from the control gate side during an erasing operation.
Inventors:
GODO HIROMICHI (JP)
KUNITAKE HITOSHI (JP)
TSUDA KAZUKI (JP)
KUNITAKE HITOSHI (JP)
TSUDA KAZUKI (JP)
Application Number:
PCT/IB2020/060547
Publication Date:
May 27, 2021
Filing Date:
November 10, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8234; H01L21/336; H01L21/8239; H01L27/088; H01L27/105; H01L27/11582; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
| WO2010106922A1 | 2010-09-23 |
Foreign References:
| JP2018157205A | 2018-10-04 | |||
| JP2019012822A | 2019-01-24 | |||
| JP2016225614A | 2016-12-28 |
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