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Title:
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/084782
Kind Code:
A1
Abstract:
Provided is a semiconductor device that has reduced power consumption and is capable of non-destructive readout. This semiconductor device has first to fourth transistors, and first and second ferroelectric tunnel junction (FTJ) elements. The first FTJ element and the second FTJ element each have an input terminal, a tunnel insulating film, a dielectric, and an output terminal. One of the source and the drain of the first transistor is electrically connected to one of the source and the drain of the third transistor, the gate of the fourth transistor, and the output terminal of the first FTJ element. One of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the fourth transistor, the gate of the third transistor, and the output terminal of the second FTJ element.

Inventors:
YAMAZAKI SHUNPEI (JP)
KIMURA HAJIME (JP)
IKEDA TAKAYUKI (JP)
Application Number:
PCT/IB2021/059187
Publication Date:
April 28, 2022
Filing Date:
October 07, 2021
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G11C11/22; H01L21/822; H01L21/336; H01L21/8234; H01L21/8244; H01L27/04; H01L27/06; H01L27/088; H01L27/10; H01L27/11; H01L27/11507; H01L27/11585; H01L29/786; H01L29/788; H01L29/792
Domestic Patent References:
WO2015141625A12015-09-24
Foreign References:
JP2002109875A2002-04-12
JPH10335489A1998-12-18
JP2019201034A2019-11-21
JP2019194931A2019-11-07
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