Title:
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/068456
Kind Code:
A1
Abstract:
A semiconductor device and a fabrication method therefor. Once a second surface of a semiconductor substrate (21) is thinned, the second surface undergoes a chemical-mechanical grinding treatment. By means of a method in which mechanical grinding is combined with chemical grinding, the semiconductor substrate (21), a first insulating dielectric layer (22) of a TSV structure and conductive posts (23) may be simultaneously ground and removed, such that the exposed conductive posts (23) and the ground second surface are flush and the heights of each of the conductive post (23) are flush. When the second surface that has undergone the chemical-mechanical grinding treatment forms a patterned second insulating dielectric layer (26), since the height of each conductive post (23) relative to the second insulating dielectric layer (26) is also consistent, the problem in the prior art in which the heights at which the conductive posts are exposed are not the consistent is avoided.
Inventors:
CAO LIQIANG (CN)
ZHANG CHUNYAN (CN)
SUN PENG (CN)
LI HENGFU (CN)
BAO HAN (CN)
ZHANG CHUNYAN (CN)
SUN PENG (CN)
LI HENGFU (CN)
BAO HAN (CN)
Application Number:
PCT/CN2020/079512
Publication Date:
April 15, 2021
Filing Date:
March 16, 2020
Export Citation:
Assignee:
SHANGHAI XIANFANG SEMICONDUCTOR CO LTD (CN)
NAT CENTER FOR ADVANCED PACKAGING CO LTD (CN)
NAT CENTER FOR ADVANCED PACKAGING CO LTD (CN)
International Classes:
H01L21/768; H01L23/528
Domestic Patent References:
| WO2006080337A1 | 2006-08-03 | |||
| WO2006080337A1 | 2006-08-03 |
Foreign References:
| CN110690164A | 2020-01-14 | |||
| CN102349140A | 2012-02-08 | |||
| CN104966695A | 2015-10-07 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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