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Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE LEAK INSPECTION METHOD
Document Type and Number:
WIPO Patent Application WO/2020/100208
Kind Code:
A1
Abstract:
A semiconductor device (33), a leak detection device (43), an outer wall (20), and a separation wall (22) are provided on a substrate (12). A lid (28) is provided to face the substrate (12). A first hollow structure (44a) in contact with the semiconductor device (33) and a second hollow structure (44b) in contact with the leak detection device (43) are separated by the separation wall (22) and formed in an airtight state, wherein the hollow structures are enclosed by the substrate (12), the outer wall (20), the separation wall (22) and the lid (28). A terminal (14) electrically connected to the leak detection device (43) and at least partially exposed to the outside is provided. At least a part of the portion of the leak detection device (43) in contact with the second hollow structure (44b) is made of a corrosive metal or an alloy including a corrosive metal. At least a portion of the outer wall (20) is in contact with the second hollow structure (44b).

Inventors:
HISAKA TAKAYUKI (JP)
Application Number:
PCT/JP2018/041955
Publication Date:
May 22, 2020
Filing Date:
November 13, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
G01M3/04; G01M3/16
Foreign References:
JPH09237847A1997-09-09
JP6381854B12018-08-29
JP2017003376A2017-01-05
JP2015219075A2015-12-07
JPS634651A1988-01-09
JPS5421390A1979-02-17
JPH0438047U1992-03-31
US3943557A1976-03-09
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
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