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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE TREATMENT SYSTEM
Document Type and Number:
WIPO Patent Application WO/2013/150920
Kind Code:
A1
Abstract:
This semiconductor device manufacturing method involves a step for forming a gate insulating film containing hafnium oxide and zirconium oxide on a workpiece where a source, drain and channel are formed, and a step for performing crystallization heat treatment on the insulating film at a temperature of 600°C or less, wherein the dielectric constant of the insulating film after crystallization heat treatment is 27 or greater.

Inventors:
AKIYAMA KOJI (JP)
HIGASHIJIMA HIROKAZU (JP)
TAMURA CHIHIRO (JP)
AOYAMA SHINTARO (JP)
WAMURA YU (JP)
Application Number:
PCT/JP2013/058805
Publication Date:
October 10, 2013
Filing Date:
March 26, 2013
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/336; C23C16/40; C23C16/56; H01L21/283; H01L21/31; H01L21/316; H01L21/318; H01L29/423; H01L29/49; H01L29/78
Foreign References:
JP2010535428A2010-11-18
JP2008186952A2008-08-14
JP2010153621A2010-07-08
JP2010192520A2010-09-02
JP2011066187A2011-03-31
JP2009043794A2009-02-26
JP2006310754A2006-11-09
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
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