SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2022/104972

A1

A semiconductor device and a manufacturing method therefor. A portion of a first metal layer (23) is removed by etching to form a first opening in the first metal layer (23); a second metal layer (26) is filled into the first opening, and is electrically connected to the remaining first metal layer (23) after etching; a through-silicon via (V8) sequentially runs through a substrate (21) and through a portion of a dielectric layer (22) by a certain thickness and exposes the second metal layer (26); an interconnection layer (28) in the through-silicon via (V8) is electrically connected to the second metal layer (26). When projections of the second metal layer (26) and the interconnection layer (28) on the substrate (21) fall within a range of a projection of the first metal layer (23) on the substrate (21), the first metal layer (23) can be led out, and the through-silicon via (V8) does not need to additionally occupy the side area of the first metal layer (23) in the transverse direction (parallel to the direction of the substrate), thereby increasing the wafer area utilization rate. The second metal layer (26) leading out the first metal layer (23) can be achieved by means of a photolithography process (a photomask); the procedure can reduce use of the photomask, reduce the costs, and reduce the process difficulty.

LIU TIANJIAN (CN)
ZHOU RUJIN (CN)
YE GUOLIANG (CN)

PCT/CN2020/136262

May 27, 2022

December 14, 2020

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WUHAN XINXIN SEMICONDUCTOR MFG (CN)

H01L23/28; H01L21/768

CN103474416A	2013-12-25
CN109148275A	2019-01-04
CN109166820A	2019-01-08
US5981395A	1999-11-09
US9793156B1	2017-10-17

SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)

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