Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/090116
Kind Code:
A1
Abstract:
Provided is a method for manufacturing a semiconductor device with less variation in characteristics. This method includes: forming a second insulator, an oxide, a conductive layer, and an insulating layer on a first insulator; depositing a third insulator and a fourth insulator so as to come into contact with the first insulator; forming a first opening in the conductive layer, the insulating layer, the third insulator, and the fourth insulator so as to reach the oxide; forming a fifth insulator, a sixth insulator, and a conductor in the first opening; depositing a seventh insulator on the fourth insulator, the fifth insulator, the sixth insulator, and the conductor; forming a mask in a first region on the seventh insulator in a top view; injecting oxygen into a second region not overlapping the first region in the top view; performing a heating process; forming a second opening in the seventh insulator so as to reach the fourth insulator; and performing a heating process.
Inventors:
YAMAZAKI SHUNPEI (JP)
KOMATSU YOSHIHIRO (JP)
YAMANE YASUMASA (JP)
NAGATSUKA SHUHEI (JP)
HAMADA TAKASHI (JP)
KOMAGATA HIROKI (JP)
KOMATSU YOSHIHIRO (JP)
YAMANE YASUMASA (JP)
NAGATSUKA SHUHEI (JP)
HAMADA TAKASHI (JP)
KOMAGATA HIROKI (JP)
Application Number:
PCT/IB2020/060124
Publication Date:
May 14, 2021
Filing Date:
October 29, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/768; H01L21/82; H01L21/822; H01L21/8234; H01L21/8242; H01L23/522; H01L27/04; H01L27/06; H01L27/088; H01L27/108; H01L27/1156
Domestic Patent References:
| WO2018163002A1 | 2018-09-13 |
Foreign References:
| JP2009278072A | 2009-11-26 | |||
| JP2015213164A | 2015-11-26 | |||
| JP2016111352A | 2016-06-20 | |||
| JP2017147445A | 2017-08-24 |
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