Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/207657
Kind Code:
A1
Abstract:
A semiconductor device according to the present invention includes: an insulating layer; a semiconductor chip provided on the top surface of the insulating layer; a conductor film that covers the top surface and side surfaces of the semiconductor chip and a portion of the top surface of the insulating layer that is exposed from the semiconductor chip; a seal that covers the top surface of the conductor film; a conductive bump that is provided on the rear surface of the insulating layer; a ground bump that is provided on the rear surface of the insulating layer; a first contact that passes through the insulating layer from the top surface to the rear surface and connects the semiconductor chip to the conductive bump; and a ground contact that passes through the insulating layer from the top surface to the rear surface and connects the conductor film to the ground bump. The conductor film covers the top surface of the insulating layer to the edges.
Inventors:
TAKAHASHI YOSHINORI (JP)
TSUKAHARA YOSHIHIRO (JP)
KATO TAKAYUKI (JP)
MIYAWAKI KATSUMI (JP)
KAWASHIMA KEIICHI (JP)
TSUKAHARA YOSHIHIRO (JP)
KATO TAKAYUKI (JP)
MIYAWAKI KATSUMI (JP)
KAWASHIMA KEIICHI (JP)
Application Number:
PCT/JP2018/016665
Publication Date:
October 31, 2019
Filing Date:
April 24, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/00; H01L23/12
Foreign References:
| US20160254237A1 | 2016-09-01 | |||
| JP2007059533A | 2007-03-08 | |||
| JPH04180659A | 1992-06-26 | |||
| JP2016092106A | 2016-05-23 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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