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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/070584
Kind Code:
A1
Abstract:
Provided is a semiconductor device provided with a semiconductor substrate that has an upper surface and a bottom surface and that includes a bulk donor, wherein: a hydrogen chemical concentration distribution in the depth direction of the semiconductor substrate is flat and, monotonically increases, or monotonically decreases from the bottom surface to the upper surface except for a portion to which a local hydrogen concentration peak is provided; and the donor concentration of the semiconductor substrate is higher than the bulk donor concentration, across the entirety from the upper surface to the bottom surface. Hydrogen ion irradiation may be performed to penetrate, from the upper surface or the bottom surface of the semiconductor substrate, through the semiconductor substrate in the depth direction.

Inventors:
AGATA YASUNORI (JP)
YOSHIMURA TAKASHI (JP)
TAKISHITA HIROSHI (JP)
MEGURO MISAKI (JP)
NEMOTO MICHIO (JP)
AJIKI TORU (JP)
ONOZAWA YUICHI (JP)
Application Number:
PCT/JP2020/034982
Publication Date:
April 15, 2021
Filing Date:
September 15, 2020
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/322; H01L21/265; H01L21/336; H01L29/739; H01L29/78
Domestic Patent References:
WO2013100155A12013-07-04
WO2018030444A12018-02-15
WO2011052787A12011-05-05
Foreign References:
JP2007266233A2007-10-11
JP2012023327A2012-02-02
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (1-6-1 Nishi-Shinjuku, Shinjuku-k, Tokyo 22, JP)
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