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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/215503
Kind Code:
A1
Abstract:
A semiconductor device A1 comprises: a semiconductor layer 11 that has a trench 10; an insulating film 12 that covers an inner surface 10a of the trench; a conductor 13 that is buried in the trench covered by the insulating film; and a Schottky junction layer 15 that forms a Schottky junction with a semiconductor layer surface 11a which is adjacent to the trench. A surface 13a of the conductor is positioned lower than the semiconductor layer surface. The semiconductor layer surface has, in a section thereof adjacent to an inner wall surface 10a1 of the trench, an inclined section 11a1 that is displaced further downward as the proximity of the semiconductor layer surface to the inner wall surface increases.

Inventors:
KABUTOYA SHINGO (JP)
Application Number:
PCT/JP2021/016318
Publication Date:
October 28, 2021
Filing Date:
April 22, 2021
Export Citation:
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Assignee:
KYOCERA CORP (JP)
International Classes:
H01L29/872; H01L21/329; H01L29/417
Domestic Patent References:
WO2018146791A12018-08-16
Foreign References:
CN107293574A2017-10-24
US20100200910A12010-08-12
JP2009521816A2009-06-04
JP2008034572A2008-02-14
CN205609533U2016-09-28
JP2012009756A2012-01-12
Attorney, Agent or Firm:
ARAFUNE, Hiroshi et al. (JP)
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