Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/215505
Kind Code:
A1
Abstract:
A semiconductor device A1 comprises: a semiconductor layer 11 having a trench 10; an insulation film 12 that covers the inner surface 10a of the trench; a conductor 13 embedded in the trench that is covered by the insulation film 12; a silicide layer 14 that forms a Schottky bond with the semiconductor layer surface 11a adjacent to the trench; and a metal layer 15 that continuously covers from the end face 14a of the silicide layer positioned higher than the top end face 12a of the insulation film covering the inner wall surface 10a of the trench, to the top end face of the insulation film. The metal layer has a metal element of the same type as the metal element that constitutes the silicide layer.
Inventors:
KABUTOYA SHINGO (JP)
Application Number:
PCT/JP2021/016326
Publication Date:
October 28, 2021
Filing Date:
April 22, 2021
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H01L29/872; H01L21/28; H01L21/329; H01L29/47
Domestic Patent References:
| WO2015084155A1 | 2015-06-11 | |||
| WO2005091799A2 | 2005-10-06 |
Foreign References:
| JP2012518292A | 2012-08-09 | |||
| JP2008034572A | 2008-02-14 | |||
| JPH09232597A | 1997-09-05 |
Other References:
See also references of EP 4141963A1
Attorney, Agent or Firm:
ARAFUNE, Hiroshi et al. (JP)
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