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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2016/084687
Kind Code:
A1
Abstract:
A semiconductor device (100A) is equipped with a substrate (101) and a thin-film transistor (10) supported by the substrate. The thin-film transistor has a gate electrode (102), an oxide semiconductor layer (104), a gate insulating layer (103), a source electrode (105), and a drain electrode (106). The oxide semiconductor layer contains: an upper semiconductor layer (104b) contacting the source and drain electrodes and having a first energy gap; and a lower semiconductor layer (104a) provided below the upper semiconductor layer and having a second energy gap smaller than the first energy gap. The source and drain electrodes comprise lower-layer electrodes (105a, 106a) that contact the oxide semiconductor layer and do not contain Cu, and principal-layer electrodes (105b, 106b) that are provided on the lower-layer electrodes and contain Cu. The edges of the lower-layer electrodes are formed in positions projecting from the edges of the principal-layer electrodes.

Inventors:
OCHI HISAO
DAITOH TOHRU
IMAI HAJIME
FUJITA TETSUO
KITAGAWA HIDEKI
KIKUCHI TETSUO
SUZUKI MASAHIKO
KAWASHIMA SHINGO
Application Number:
PCT/JP2015/082498
Publication Date:
June 02, 2016
Filing Date:
November 19, 2015
Export Citation:
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Assignee:
SHARP KK (JP)
International Classes:
H01L29/786; C23C14/08; G02F1/1368; H01L21/28; H01L21/336; H01L21/363; H01L29/417; H01L51/50; H05B33/14
Foreign References:
JP2014022492A2014-02-03
JP2013254951A2013-12-19
JP2014103390A2014-06-05
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
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