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Title:
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR, AND MEMORY APPARATUS
Document Type and Number:
WIPO Patent Application WO/2022/062602
Kind Code:
A1
Abstract:
A semiconductor device and a preparation method therefor, and a memory apparatus. The preparation method for the semiconductor device comprises: providing a semiconductor substrate (1), the semiconductor substrate (1) being provided with a plurality of first regions (151) and a plurality of second regions (152) alternately arranged and adjacently arranged; on the semiconductor substrate (1), forming a laminated structure (5) intersecting with the first regions (151) and the second regions (152); forming a side wall structure on a surface of the laminated structure (5), the side wall structure and the laminated structure (5) forming bit lines; filling a sacrificial layer (16) therein, the height of the sacrificial layer (16) being greater than or equal to that of the bit lines; etching the side wall structure in the first regions (151), such that the laminated structure (5) and the side wall structure form a step shape, the middle of which is higher than two sides thereof; forming dielectric layers (11) at parts of the semiconductor substrate (1) in the first regions (151); and performing a planarization treatment on the dielectric layers (11) and the bit lines, so as to remove, on a side away from the semiconductor substrate (1), part of the dielectric layers (11) and part of the laminated structure (5). The semiconductor device does not cause capacitor contact hole short circuiting and does not cause insulation performance reduction.

Inventors:
JIN XING (CN)
Application Number:
PCT/CN2021/106926
Publication Date:
March 31, 2022
Filing Date:
July 16, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242
Foreign References:
CN109841595A2019-06-04
CN104900584A2015-09-09
CN111653568A2020-09-11
US20190206873A12019-07-04
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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