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Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD, SUBSTRATE PROCESSING DEVICE AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2019/064434
Kind Code:
A1
Abstract:
Provided is a technique comprising a first step of supplying a first processing gas containing hydrogen peroxide to a substrate having a silicon-containing film formed on the surface thereof, to modify the silicon-containing film into a silicon oxide film, and a second step of supplying to the substrate, after the first step, a second processing gas containing a compound having an NH group, thereby modifying the silicon oxide film. The present technique allows the quality of substrate processing that is performed using hydrogen peroxide to be improved.

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Inventors:
HORITA SUSUMU (JP)
HORII SADAYOSHI (JP)
Application Number:
PCT/JP2017/035241
Publication Date:
April 04, 2019
Filing Date:
September 28, 2017
Export Citation:
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Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/316; H01L21/31
Domestic Patent References:
WO2013065771A12013-05-10
WO2017056188A12017-04-06
Foreign References:
JP2015053445A2015-03-19
JP2012104569A2012-05-31
JP2009206440A2009-09-10
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