Title:
SEMICONDUCTOR DEVICE AND WIRELESS COMMUNICATION DEVICE INCLUDING SAID SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/240331
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a novel structure. The present invention comprises: an oscillation circuit having a first coil, a second coil, a first capacitor, a second capacitor, a first transistor, and a second transistor; and a frequency correction circuit having a third capacitor, a fourth capacitor, a third transistor, a fourth transistor, and a switching circuit. The switching circuit functions to control a conductive state or a non-conductive state of the third transistor and the fourth transistor. The frequency correction circuit is provided in a layer above the oscillation circuit and functions to adjust the oscillation frequency of the oscillation circuit. The first transistor and the second transistor each have a semiconductor layer containing silicon in a channel formation region. The third transistor and the fourth transistor each have a semiconductor layer having an oxide semiconductor in a channel formation region.
Inventors:
YAKUBO YUTO (JP)
KUNITAKE HITOSHI (JP)
IKEDA TAKAYUKI (JP)
KUNITAKE HITOSHI (JP)
IKEDA TAKAYUKI (JP)
Application Number:
PCT/IB2020/054665
Publication Date:
December 03, 2020
Filing Date:
May 18, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H03B5/02; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/786; H03B5/08; H03B5/12
Domestic Patent References:
| WO2013136766A1 | 2013-09-19 |
Foreign References:
| JP2017188884A | 2017-10-12 | |||
| JP2018186313A | 2018-11-22 | |||
| JPH01259628A | 1989-10-17 | |||
| JP2009284329A | 2009-12-03 |
Download PDF: