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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2000/068992
Kind Code:
A1
Abstract:
A semiconductor device comprises (a) a base substrate, (b) an insulating substrate including an insulating plate provided with front and back electrodes, the insulating substrate being fixed to the base substrate with the back electrodes intervening, (c) a semiconductor element fixed to the insulating substrate with the front electrodes intervening, (d) an insulating cover applied over the semiconductor element, and (e) an electrode extending from the semiconductor element and appearing outside the insulating cover. The back electrode is larger than the insulating plate. The base substrate includes a through hole smaller than the back electrode and larger than the insulating plate. The insulating substrate is located in the through hole, and fixed to the back of the base substrate with the edges of the back electrode intervening. The insulating substrate is brought into direct contact with a heat sink, rather than on the base substrate, to decrease the thermal resistance between the semiconductor element and the heat sink. The bending stress on the insulating plate when the heat sink is screwed to the base substrate is eased by the back electrodes. This keeps the insulating plate from damage that may cause dielectric breakdown.

Inventors:
MATSUMOTO HIDEO (JP)
Application Number:
PCT/JP1999/002417
Publication Date:
November 16, 2000
Filing Date:
May 11, 1999
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
MATSUMOTO HIDEO (JP)
International Classes:
H01L23/053; H01L25/07; (IPC1-7): H01L23/48
Foreign References:
JPH0766340A1995-03-10
JPH0922973A1997-01-21
Other References:
See also references of EP 1104025A4
Attorney, Agent or Firm:
Aoyama, Tamotsu (Shimori 1-chome Chuo-ku, Osaka-shi Osaka, JP)
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