Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/073047
Kind Code:
A1
Abstract:
The present invention comprises: a substrate (1); a channel layer (3) that is a nitride semiconductor formed above the substrate (1); a first barrier layer (4) that is a nitride semiconductor formed selectively on the channel layer (3) and having a band gap greater than the band gap of the channel layer (3); a gate layer (5) that is a nitride semiconductor formed on the first barrier layer (4); a second barrier layer (6) that is a nitride semiconductor, the thickness or the band gap of which is set independently of the first barrier layer (4) and the band gap of which is greater than the band gap of the channel layer (3), and that is formed in a region, on the channel layer (3), where the gate layer (5) is not formed, such that the second barrier layer (6) is in contact with the first barrier layer (4); a gate electrode (8) formed on the gate layer (5); and a source electrode (9) and a drain electrode (10) which are each spaced away from the gate layer (5) and formed on the second barrier layer (6).
Inventors:
OKITA HIDEYUKI
HIKITA MASAHIRO
UEMOTO YASUHIRO
HIKITA MASAHIRO
UEMOTO YASUHIRO
Application Number:
PCT/JP2016/004679
Publication Date:
May 04, 2017
Filing Date:
October 25, 2016
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L21/337; H01L21/338; H01L27/098; H01L29/778; H01L29/808; H01L29/812
Foreign References:
| JP2014072424A | 2014-04-21 | |||
| JP2009141244A | 2009-06-25 | |||
| JP2010103425A | 2010-05-06 | |||
| JP2012069662A | 2012-04-05 | |||
| JP2014072258A | 2014-04-21 | |||
| JP2013235873A | 2013-11-21 | |||
| JP2014140024A | 2014-07-31 |
Attorney, Agent or Firm:
KAMATA, Kenji et al. (JP)
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