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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/192242
Kind Code:
A1
Abstract:
A semiconductor device, comprising: a semiconductor substrate (101), wherein the semiconductor substrate (101) has a first buried layer region (102) and a second buried layer region (104) formed therein; an epitaxial layer is formed on the semiconductor substrate (101); a well region (106), a source region (108) and a drain region (109) are respectively formed in the epitaxial layer, wherein the well region (106) and the source region (108) are located above the first buried layer region (102), and the drain region (109) is located above the second buried layer region (104); and the doping depth is gradually increased in the direction from one end of the second buried layer region (104) close to the source region (108) to the other end close to the drain region (109).

Inventors:
ZHANG GUANGSHENG (CN)
ZHANG ZHILI (CN)
Application Number:
PCT/CN2019/071703
Publication Date:
October 10, 2019
Filing Date:
January 15, 2019
Export Citation:
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Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/06; H01L29/78
Foreign References:
CN106972047A2017-07-21
CN103633136A2014-03-12
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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