Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/192243
Kind Code:
A1
Abstract:
The present application provides a semiconductor device, which comprises a semiconductor substrate (201), a field oxide layer (207), a gate plate and field plate integration structure (208) and a plurality of contact holes (209). A body region (202) and a drift region (203) are formed in the semiconductor substrate (201). An active region (204) is formed in the body region (202), and a drain region (205) is formed in the drift region (203). The field oxide layer (207) is located on the drift region (203) and the drift region (203) surrounds at least part of the field oxide layer (207). The gate plate and field plate integration structure (208) is provided across the semiconductor substrate (201) and the field oxide layer (207), and extends onto the body region (202). The contact hole (209) penetrates into the field oxide layer (207), and the depth of the contact hole (209) near the source region (204) penetrating into the field oxide layer (207) is greater than the depth of the contact hole (209) near the drain region (205) penetrating into the field oxide layer (207).
Inventors:
WANG GUANGYANG (CN)
Application Number:
PCT/CN2019/071724
Publication Date:
October 10, 2019
Filing Date:
January 15, 2019
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/78
Foreign References:
| CN101714552A | 2010-05-26 | |||
| US20030132459A1 | 2003-07-17 | |||
| CN101079446A | 2007-11-28 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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