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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/234689
Kind Code:
A1
Abstract:
A novel semiconductor device is provided. The semiconductor device includes: a first control circuit having a first transistor using a silicon substrate for a channel; a second control circuit provided on the first control circuit and having a second transistor using a metal oxide for a channel; a memory circuit provided on the second control circuit and having a third transistor using a metal oxide for a channel; and a global bit line and an inverted global bit line which function to transmit a signal between the first control circuit and the second control circuit. The first control circuit has a sense amplifier circuit having an input terminal and an inverted input terminal. In a first period during which data is read from the memory circuit to the first control circuit, the second control circuit controls whether to charge the discharged global bit line and the discharged inverted global bit line according to the data read from the memory circuit.

Inventors:
YAKUBO YUTO (JP)
SAITO SEIYA (JP)
ONUKI TATSUYA (JP)
Application Number:
PCT/IB2020/054454
Publication Date:
November 26, 2020
Filing Date:
May 12, 2020
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G11C5/02; G11C7/12; G11C11/4094; H01L21/8242; H01L27/108; H01L29/786
Domestic Patent References:
WO2019048967A12019-03-14
Foreign References:
JP2013065638A2013-04-11
JP2012138160A2012-07-19
JP2002008386A2002-01-11
JP2000090682A2000-03-31
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