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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/029285
Kind Code:
A1
Abstract:
Provided is a semiconductor device comprising a first-electroconductivity-type drift region provided to a semiconductor substrate, and a first-electroconductivity-type buffer region provided between the drift region and the bottom surface of the semiconductor substrate, the buffer region having, in the depth direction of the semiconductor substrate, three or more density peaks for which the doping density is higher than the draft region, the three or more density peaks including: a shallowest peak that is nearest to the bottom surface of the semiconductor substrate; a high-density peak disposed in a position separated farther than the shallowest peak from the bottom surface of the semiconductor substrate; and a low-density peak disposed in a position farther separated than the high-density peak from the bottom surface of the semiconductor substrate, the doping density of the low-density peak being 1/5 or less the doping density of the high-density peak.

Inventors:
OHI KOTA (JP)
IKURA YOSHIHIRO (JP)
SAKURAI YOSUKE (JP)
KITAMURA MUTSUMI (JP)
ONOZAWA YUICHI (JP)
KATO YOSHIHARU (JP)
AJIKI TORU (JP)
Application Number:
PCT/JP2020/029879
Publication Date:
February 18, 2021
Filing Date:
August 04, 2020
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/8234; H01L21/336; H01L27/06; H01L29/06; H01L29/739; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
WO2018135448A12018-07-26
Foreign References:
US20080001257A12008-01-03
JP2018078314A2018-05-17
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (1-6-1 Nishi-Shinjuku, Shinjuku-k, Tokyo 22, JP)
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