SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2021/054207

A1

Provided is a semiconductor device in which a decrease in dielectric breakdown strength of a dielectric film (deterioration of withstand voltage resistance of the dielectric film) is suppressed. The semiconductor device comprises: a semiconductor substrate having a first main surface and a second main surface facing each other; a dielectric film arranged on a part of the first main surface; a first electrode layer arranged on a part of the dielectric film; and a protective layer that continuously covers from the end portion of the first electrode layer to a first outer peripheral edge of the dielectric film. The dielectric film has an electrode layer arrangement portion on which the first electrode layer is arranged and a protective layer covering portion covered by the protective layer. The thickness of the dielectric film at the first outer peripheral edge of the protective layer covering portion is smaller than the thickness of the electrode layer arrangement portion of the dielectric film. The protective layer includes a first protective layer that continuously covers a second outer peripheral edge of the first electrode layer and at least a part of the protective layer covering portion, and a second protective layer arranged on the first protective layer. The first protective layer has a lower relative permittivity than the second protective layer. The second protective layer has higher moisture resistance than the first protective layer.

YAMAGUCHI YOHEI (JP)
ASHIMINE TOMOYUKI (JP)
MURASE YASUHIRO (JP)

PCT/JP2020/033990

March 25, 2021

September 08, 2020

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MURATA MANUFACTURING CO (JP)

H01L27/04; H01G4/30; H01G4/33; H01L21/822

WO2019021817A1	2019-01-31
WO2018211919A1	2018-11-22

YAMAO, Norihito et al. (JP)

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