Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/074971
Kind Code:
A1
Abstract:
The semiconductor device according to the present invention is provided with: a semiconductor substrate; an n-type first cladding layer provided on the semiconductor substrate; an n-type second cladding layer provided on the first cladding layer; an active layer provided on the second cladding layer; a p-type third cladding layer provided on the active layer; a front-surface electrode provided on the third cladding layer; a rear-surface electrode provided under the semiconductor substrate; and a p-type diffusion suppression layer provided between the first cladding layer and the second cladding layer.
Inventors:
KAWAHARA HIROYUKI (JP)
Application Number:
PCT/JP2019/040508
Publication Date:
April 22, 2021
Filing Date:
October 15, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/323; H01S5/227
Foreign References:
| JPS58196088A | 1983-11-15 | |||
| JPH05145169A | 1993-06-11 | |||
| JPS58196089A | 1983-11-15 | |||
| JP2019071397A | 2019-05-09 | |||
| JPH03151683A | 1991-06-27 | |||
| JPH03268376A | 1991-11-29 | |||
| JP2010287804A | 2010-12-24 | |||
| JP2010056331A | 2010-03-11 | |||
| JP2006060105A | 2006-03-02 | |||
| US20040125845A1 | 2004-07-01 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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