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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/084369
Kind Code:
A1
Abstract:
Provided is a semiconductor device with little variation in properties. The present invention has a first insulator, transistors on the first insulator, a second insulator on the transistors, a third insulator on the second insulator, a fourth insulator on the third insulator, and opening regions. The opening regions each have the second insulator, the third insulator on the second insulator, and the fourth insulator on the third insulator. The third insulator has openings that reach the second insulator, and the fourth insulator is in contact with the upper surface of the second insulator inside the openings.

Inventors:
YAMAZAKI SHUNPEI (JP)
NAGATSUKA SHUHEI (JP)
KAWATA TAKUYA (JP)
HODO RYOTA (JP)
Application Number:
PCT/IB2020/059796
Publication Date:
May 06, 2021
Filing Date:
October 19, 2020
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Domestic Patent References:
WO2019111096A12019-06-13
Foreign References:
JP2009278072A2009-11-26
JP2017147445A2017-08-24
JP2006270077A2006-10-05
JP2019096856A2019-06-20
JP2015084414A2015-04-30
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