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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/085110
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a technology capable of enhancing the heat dissipation characteristics of a semiconductor device. A semiconductor device according to the present invention is provided with: a heat-radiation plate; a layer member connected to the heat-radiation plate; and a first semiconductor element and a second semiconductor element. The first semiconductor element and the second semiconductor element are connected to the layer member on the opposite side from the heat-radiation plate and are separated from each other with a gap therebetween. The heat-radiation plate includes a thick wall section and a thin wall section that is thinner than the thick wall section. The thin wall section is in contact with a groove section provided in a surface of the heat-radiation plate, said surface being on the opposite side from the layer member, and overlaps the gap in plan view.

Inventors:
TSUNODA TETSUJIRO (JP)
Application Number:
PCT/JP2020/039538
Publication Date:
April 28, 2022
Filing Date:
October 21, 2020
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/36
Foreign References:
JP2016115782A2016-06-23
JPH1041440A1998-02-13
JP2010153785A2010-07-08
JP2015015274A2015-01-22
JP2006202798A2006-08-03
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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