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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/153652
Kind Code:
A1
Abstract:
This semiconductor device includes: a semiconductor layer; a first-electroconductivity-type first region formed on a surface layer part of a first main surface of the semiconductor layer; a cell structure having a second-electroconductivity-type second region formed on a surface layer part of the first region, a first-electroconductivity-type third region formed on the surface layer part of the first region so as to be in contact with the second region, and a control electrode that forms a current path in the second region and that faces the second region via an interposed first insulating film adjacent to the second region; a first electrode layer that is formed so as to cover the cell structure on the first main surface of the semiconductor layer and that is electrically connected to the third region; a second electrode layer that is formed apart from the first electrode layer on the first main surface of the semiconductor layer and that is electrically connected to the control electrode; a first recess that is formed in the surface layer part of the first main surface of the semiconductor layer so as to face the second electrode layer; a second insulating film that covers the first recess; and an auxiliary electrode that is implanted in the first recess with the second insulating film interposed therebetween and that is electrically connected to the second electrode layer.

Inventors:
MURASAKI KOHEI (JP)
Application Number:
PCT/JP2021/041141
Publication Date:
July 21, 2022
Filing Date:
November 09, 2021
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/336; H01L23/48; H01L29/06; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
WO2002058160A12002-07-25
Foreign References:
JP2011192822A2011-09-29
JP2013201266A2013-10-03
JP2020194881A2020-12-03
JP2020031167A2020-02-27
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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